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10-10 torr UHV chamber.
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Load lock chamber.
•
Two electron beam guns.
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Low temperature molecular beam evaporation source.
•
Four dual head quartz crystal sensors for rate monitoring.
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Rotating, DC biased, temperature controlled to 500°
C substrate holder.
•
In situ floating shadow masking, positioning 20 mm
or more over substrate, moving range 1 cm x 1 cm with 5
mm resolution.
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3 cm DC Kaufman ion gun.
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Tectra plasma source.
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Residual gas analyzer (RGA).
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Ion flux probe.
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Uses: organic metallic deposition, binary alloys deposition,
etc.